# Advancements in GaN technology for AI power systems

> Live situation record from CLSTR: https://clstr.news/situations/advancements-in-gan-technology-for-ai-power-systems
> Updated: 2026-09-03T00:31:58.000Z. Sources: 4. Developments: 4.

Developments in gallium-nitride (GaN) technology are advancing to meet the power demands of AI infrastructure and high-voltage systems.

Power Integrations announced the introduction of PowiGaN devices rated up to 2200V, a level intended to provide “substantial voltage margin for emerging high-voltage power systems” while competing with silicon-carbide devices in sectors like solar and HVDC infrastructure. Following this, Efficient Power Conversion (EPC) began mass production of the EPC2370, an 18V eGaN FET designed to support the transition toward 800 VDC power distribution in AI server power supplies.

Expanding on high-voltage capabilities, researchers at EPFL’s POWERlab have developed a new GaN power-device design called an intrinsic polarization superjunction (iPSJ). This method utilizes GaN’s natural polarization properties to create both a two-dimensional electron gas (2DEG) and a two-dimensional hole gas (2DHG), rather than relying on chemical doping. This charge balance allows the electric field to spread evenly across the device, addressing the typical breakdown limitations of GaN electronics.

Testing of these Schottky barrier diodes showed breakdown voltages exceeding 3.9 kV while maintaining low on-resistance and stability at temperatures up to 125°C. The chip-sized iPSJ device, constructed from GaN layers on a low-cost silicon base, can withstand nearly 4 kV before breakdown, setting a record for this technology. This combination of high-voltage capability and efficiency is considered essential for power conversion in renewable energy systems and AI data centres.

## Timeline

### 2026-09-03: EPFL researchers develop high-voltage GaN transistor

EPFL researchers have developed a new GaN transistor, the intrinsic polarisation superjunction, capable of handling nearly 4 kV with minimal energy loss for use in AI data centres and renewable energy.

2 sources. https://clstr.news/cluster/epfl-researchers-develop-high-voltage-gan-transistor

### 2026-08-31: EPFL researchers develop high-voltage gallium nitride power chips

EPFL researchers have developed a new gallium nitride (GaN) transistor design capable of handling nearly 4 kV, potentially improving efficiency for electric vehicles and AI infrastructure.

2 sources. https://clstr.news/cluster/epfl-researchers-develop-high-voltage-gallium-nitride-power-chips

### 2026-08-25: Efficient Power Conversion begins mass production of GaN FETs for AI

Efficient Power Conversion has begun mass production of the EPC2370 eGaN FET, designed to boost efficiency and power density in next-generation AI server power supplies.

2 sources. https://clstr.news/cluster/efficient-power-conversion-begins-mass-production-of-gan-fets-for-ai

### 2026-08-06: Power Integrations unveils 2200V GaN technology for AI data centres

Power Integrations' new 2200 V GaN devices exceed existing GaN voltages, promising higher efficiency and power density for AI data centres, EVs, renewables and HVDC systems.

2 sources. https://clstr.news/cluster/power-integrations-unveils-2200v-gan-technology-for-ai-data-centres

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Cite as: Advancements in GaN technology for AI power systems. CLSTR, https://clstr.news/situations/advancements-in-gan-technology-for-ai-power-systems