# Global semiconductor fab expansion

> Live situation record from CLSTR: https://clstr.news/situations/global-semiconductor-fab-expansion
> Updated: 2026-07-30T10:05:33.000Z. Sources: 4. Developments: 2.

Since July 2026 the rollout of new fabs and advanced‑node production has accelerated. Tata Electronics and Powerchip’s Gujarat wafer fab, now pushed to mid‑2028, will start with a 90 nm node. Samsung announced a second Texas fab targeting completion in 2026 and a 1.4 nm product line for 2030; its Texas 2 nm volume production is slated for end‑2026 with a second Texas plant planned. TSMC is fast‑tracking its 1.4 nm line in Taiwan for mid‑2028 volume and expects its 3 nm wafer starts to reach 180 000 per month by Q4 2024, with 2 nm output of 80‑100 k wafers per month by year‑end. Huawei outlined a 1.4 nm‑equivalent roadmap for 2031. By August 2026 Samsung reported 100 % utilization of its fab capacity in H2 2026, driven by AI and HPC demand for HBM4, and confirmed progress toward full‑scale 2‑nm production. At the Future of Memory and Storage conference Samsung unveiled the zHBM architecture, V10 BV‑NAND storage and LPDDR5X‑PIM AI‑memory. SK Hynix with Marvell introduced the CMM‑Ax CXL‑based memory module delivering up to 5.5 × GPU‑level AI throughput. LG presented a three‑tier AIoT chip platform (1.5‑30 TOPS). HanYu showcased an AI‑driven ultrasonic inspection system for multilayer ceramic capacitors. Samsung Display revealed Center Etched Thin Glass technology for foldable OLEDs. Combined 2‑nm/3‑nm capacity across TSMC and Samsung now exceeds 260 000 wafers per month.

## Claims

- Samsung will begin construction of a second semiconductor fab in Taylor, Texas by the end of 2026, targeting mass production in 2030. (single source)
- Samsung's first Taylor fab is scheduled to start operation in 2026 and will later expand to 2 nm capacity. (single source)
- TSMC's 1.4 nm fab in Taichung, Taiwan, expects its first building to be completed by April 2027, with trial production in early Q3 2027 and volume production by mid‑2028. (single source)
- TSMC is investing about $49 billion in four 1.4 nm fabs, with projected wafer prices around $45,000 each. (single source)
- TSMC is using artificial‑intelligence systems to monitor construction risks, thermal management and staff safety at its 1.4 nm fab sites. (single source)
- Huawei aims to achieve a 1.4 nm‑equivalent semiconductor process by 2031 without using EUV lithography from ASML. (single source)
- Huawei's plan relies on deep‑ultraviolet immersion lithography and multi‑patterning techniques such as self‑aligned quadruple patterning. (single source)
- Samsung is evaluating additional fab capacity for 1.4 nm production based on rising customer demand. (single source)

## Timeline

### 2026-07-30: Samsung, TSMC and Huawei Accelerate 1.4nm Chip Production Plans

Samsung, TSMC and Huawei each announced accelerated plans for 1.4 nm chip production—Samsung’s Texas fab by 2030, TSMC’s Taiwan plant by mid‑2028, and Huawei’s EUV‑free roadmap targeting 2031.

4 sources. https://clstr.news/cluster/huawei-and-tsmc-target-14nm-chip-production

### 2026-07-17: Tata Electronics' India wafer plant delayed to 2028, begins with 90nm chips

India's first major wafer fab by Tata Electronics and Taiwan's Powerchip is now expected to start commercial operations in mid‑2028 using a 90nm process, after a two‑year delay from the originally promised 28nm

9 sources. https://clstr.news/cluster/tata-electronics-india-wafer-plant-delayed-to-2028-begins-with-90nm-chips

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Cite as: Global semiconductor fab expansion. CLSTR, https://clstr.news/situations/global-semiconductor-fab-expansion