# University of Texas SOT-MRAM development for AI

> Live situation record from CLSTR: https://clstr.news/situations/university-of-texas-sot-mram-development-for-ai
> Updated: 2026-08-31T13:53:34.000Z. Sources: 8. Developments: 2.

Researchers at the University of Texas at Austin have developed and tested a magnetic memory technology known as SOT-MRAM (Spin-Orbit Torque Magnetic Random-Access Memory) to address the energy and computational demands of artificial intelligence.

In collaboration with Taiwan Semiconductor Manufacturing Company (TSMC), engineers tested the non-volatile technology, which retains information without a continuous power supply. This allows devices to reduce energy consumption by avoiding data reloading during sleep modes or restarts. Testing involving neural network training and inference demonstrated write operations of 2 nanoseconds, consuming only 2 picojoules of energy per write.

As AI models increase in complexity, the SOT-MRAM architecture aims to mitigate computational bottlenecks caused by data movement between memory and processors. By bringing memory and calculation closer together, the technology allows certain operations to be executed directly within the memory devices, offering faster state changes and higher efficiency than existing solutions.

## Claims

- Researchers at the University of Texas at Austin developed SOT-MRAM technology. (corroborated by 3 sources)
- The research was published in the journal Science Advances. (corroborated by 3 sources)
- SOT-MRAM uses magnetic properties to store information. (corroborated by 3 sources)
- SOT-MRAM is non-volatile and retains data without electricity. (corroborated by 3 sources)
- The technology aims to reduce energy consumption and increase speed for AI workloads. (corroborated by 3 sources)
- The architecture brings memory and calculation closer together to perform operations directly in memory devices. (corroborated by 3 sources)

## Timeline

### 2026-08-31: University of Texas researchers develop SOT-MRAM for AI efficiency

University of Texas researchers developed SOT-MRAM, a non-volatile magnetic memory designed to make AI faster and more energy-efficient by performing calculations directly within memory devices.

4 sources. https://clstr.news/cluster/university-of-texas-researchers-develop-sot-mram-for-ai-efficiency

### 2026-08-29: University of Texas and TSMC test SOT-MRAM to reduce AI energy use

Researchers from the University of Texas and TSMC have tested SOT-MRAM, a non-volatile memory technology designed to reduce the high energy consumption of artificial intelligence systems.

3 sources. https://clstr.news/cluster/university-of-texas-and-tsmc-test-sot-mram-to-reduce-ai-energy-use

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Cite as: University of Texas SOT-MRAM development for AI. CLSTR, https://clstr.news/situations/university-of-texas-sot-mram-development-for-ai