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[TECHNOLOGY] · Taiwan, South Korea, United States · 36 sources

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Samsung to use TSMC 3nm process for Nvidia custom NVHBM memory

Samsung Electronics has agreed to a first-of-its-kind collaboration with rival TSMC to manufacture the base dies for Nvidia’s next-generation custom High Bandwidth Memory (NVHBM). To meet Nvidia’s technical requirements and ensure standardization across suppliers, Samsung, SK Hynix, and Micron will utilize TSMC’s 3nm process for the base die component.

Nvidia’s NVHBM design, based on the HBM4E architecture, integrates a custom memory controller directly into the base die. This architectural shift is intended to reduce the physical layer area by 60% compared to standard HBM, while providing up to a 30% increase in bandwidth and a 15% reduction in power consumption. The core dies for these memory modules will be manufactured using sixth-generation DRAM technology.

While Samsung is adopting TSMC’s process for this specific Nvidia project, the company will continue to use its own in-house manufacturing model for standard HBM and other custom products. Additionally, Samsung is exploring the use of its own 2nm process as a potential backup to ensure capacity if demand for NVHBM exceeds TSMC’s production capabilities.

Entities

ASML · CoreWeave · Jensen Huang · Michael Intrator · Micron Technology · Nvidia · SK Hynix · Samsung Electronics · TSMC · Taiwan Semiconductor Manufacturing Company

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