Ajou University and Samsung Electronics develop new hybrid photoresist for EUV processes

A joint research team from Ajou University and Samsung Electronics has developed a new hybrid photoresist (HPR) material designed for next-generation Extreme Ultraviolet (EUV) semiconductor manufacturing processes.

By combining organic materials with tin (Sn) components, the researchers created a material that addresses the limitations of existing chemically amplified resists. The new hybrid material improves EUV photon absorption, reducing the required exposure dose by 16% to 23% depending on the pattern spacing. This efficiency can potentially lower manufacturing costs by reducing the operating time of expensive EUV equipment.

Furthermore, the material demonstrates improved etch resistance and pattern stability, which are critical as semiconductor circuits continue to shrink to the nanometer scale. The research team successfully verified the performance of the material using a 12-inch wafer-based EUV process. The findings have been published in the international academic journal ‘Chemical Engineering Journal’.