ASML and Zeiss propose Hyper NA EUV technology for next-generation chipmaking

Engineers from ASML and optical partner Carl Zeiss have presented a technical roadmap for Hyper NA extreme ultraviolet (EUV) lithography, a technology aimed at advancing semiconductor manufacturing precision. According to a peer-reviewed paper, the proposed system would increase the numerical aperture (NA) from the current High NA standard of 0.55 to at least 0.75.

This advancement is designed to enable the printing of features approximately 5 nanometers in size, which is a significant reduction compared to current capabilities. The technology aims to leverage existing 13.5 nanometer EUV light sources and current mask infrastructure to minimize the need for fundamental changes to the manufacturing ecosystem.

While the technical roadmap is established, the technology is still in the research and development phase. Estimates suggest that Hyper NA systems may not be ready for commercial use for approximately ten years, potentially arriving around 2036. ASML has not yet committed to a specific mass-production timeline or announced pricing, though industry estimates suggest a single machine could cost approximately $720 million.