ASML, Samsung, and TSMC partner on next-generation chip lithography

High NA EUV lithography semiconductor manufacturing 12-inch photomasks DRAM production chip shortage

Samsung and TSMC have joined a consortium led by ASML to adopt High NA (high numerical aperture) EUV lithography machines. This initiative, which includes Intel, aims to address chip shortages and meet the increasing demands of artificial intelligence.

As part of the collaboration, the companies are working to transition from the current 6-inch photomask standard to larger 12-inch masks. This shift is expected to increase manufacturing yields and reduce production costs for advanced semiconductor nodes. The new mask standard is projected to enter production by 2033.

Samsung plans to deploy High NA EUV technology for mass production of DRAM by 2028, while TSMC aims to implement it in advanced nodes by 2030. SK Hynix is also reportedly evaluating participation in the consortium.