ChangXin Storage Nears LPDDR6 Verification, Targets 2026 Mass Production

On August 1, ChangXin Storage announced that its sixth‑generation low‑power DDR memory (LPDDR6) is close to completing the research‑and‑development verification stage, a critical step before entering full‑scale production. The chip is designed for a peak data rate of 12,800 Mbps, a base rate of 10,667 Mbps, 16 Gb per die and a 16 GB capacity, using a 1,295‑ball POP package and offering lower power consumption and improved RAS features compared with LPDDR5X. Samples have already been sent to core customers, and the company aims to begin volume production in the second half of 2026. The LPDDR6 standard, released by JEDEC in July 2025, targets mobile devices and AI applications, and ChangXin’s progress could shift the high‑end mobile memory market, which has been dominated by overseas suppliers.

The development underscores China’s push to move from “following” to “leading” in advanced memory technology, potentially reshaping global supply dynamics for next‑generation mobile and AI hardware.