Chinese researchers boost memory chip lifespan 100-fold

Researchers from Xidian University, in collaboration with Fudan University and the City University of Hong Kong, have developed a method to significantly increase the lifespan of wurtzite ferroelectric memory chips. The study, published in the journal Science, demonstrates over 10 billion writing cycles using aluminium scandium nitride (AlScN).

This achievement represents a 100-fold increase in endurance compared to previous capabilities. Previously, AlScN devices typically failed after approximately 100 million cycles, which was insufficient for commercial use. By overcoming this deterioration issue, the technology moves closer to practical application in high-performance computing and artificial intelligence systems. AlScN is considered a promising material due to its rapid switching speeds, low energy consumption, and compatibility with existing semiconductor manufacturing processes.