CXMT targets 2026 for next-gen 4F² DRAM products

DRAM architecture 4F2 memory cell DDR5 RDIMM semiconductor manufacturing AI memory

ChangXin Memory Technologies (CXMT) is advancing its next-generation DRAM development, aiming to introduce DDR5 RDIMM products utilizing the 4F² memory cell architecture by the end of 2026. This transition from the current 6F² standard to a 4F² structure involves moving from horizontal to vertical transistor channels, which significantly increases storage density and power efficiency.

CXMT President Cao Kanyu noted that the company has secured over 300 patents related to this architecture. While CXMT targets the server memory market, the company faces challenges from U.S. restrictions on semiconductor production equipment. Despite these constraints, CXMT aims to expand its global DRAM market share, which could reach 14% by 2027.

In the competitive landscape, Samsung Electronics is also developing next-generation NAND products, including the z NAND line designed for various AI applications. Samsung’s z NAND-O focuses on edge AI, while the internally developed z NAND-T and z NAND-I target high-bandwidth data centers and high IOPS requirements, respectively. Meanwhile, SK Hynix is also pursuing customized AI NAND products to compete in the evolving AI infrastructure market.