DB HiTek completes reliability certification for 8-inch 1200V SiC MOSFET process

South Korean pure-play foundry DB HiTek has announced the successful reliability certification of its 1200V Silicon Carbide (SiC) MOSFET process based on 8-inch (200mm) wafers. This development marks a significant step in the company's entry into the 8-inch SiC foundry market, with mass production scheduled for the second quarter of 2027.

SiC is a next-generation power semiconductor material that outperforms traditional silicon in high-temperature and high-pressure environments, making it ideal for electric vehicles (EVs), new energy systems, and industrial power equipment. While the current SiC market primarily utilizes 6-inch wafers, the industry is shifting toward 8-inch wafers to improve production efficiency and cost competitiveness.

DB HiTek has established what it describes as the world's first complete 1200V 8-inch SiC foundry process flow, covering design, manufacturing, electrical characterization, and reliability certification. The company has already delivered first and second-generation Process Design Kits (PDK) to customers, with a third-generation PDK expected in November. These kits are intended to reduce initial development resources and shorten product development cycles by more than one year.