DRDO develops indigenous GaN technology for defense systems

The Defence Research and Development Organisation (DRDO) has successfully developed and demonstrated indigenous Gallium Nitride (GaN) technology for high-frequency defense systems. According to the Ministry of Defence's FY25-26 annual report, this advancement supports next-generation radars, electronic warfare, communications, intelligence, surveillance, reconnaissance, and unmanned systems.

A single indigenous GaN chip, measuring 3.5 x 3 mm, can deliver up to 30 watts of power and operates at speeds approximately 300 times faster than traditional silicon. The development includes the successful demonstration of Monolithic Microwave Integrated Circuit (MMIC) technology for applications up to the X-band, as well as S-band GaN High Electron-Mobility (HEMT) power bars and amplifiers.

Developed primarily by the Solid State Physics Laboratory (SSPL), the initiative also includes the development of indigenous processes for manufacturing 4-inch-diameter Silicon Carbide (SiC) wafers. To further strengthen domestic semiconductor capabilities and support the ‘Atmanirbhar Bharat’ goal, DRDO has entered into an agreement with Agnit Semiconductors to develop advanced GaN semiconductors.