Efficient Power Conversion begins mass production of GaN FETs for AI

Efficient Power Conversion (EPC) has commenced mass production of the EPC2370, an ultra-low on-resistance 18 V eGaN FET. The component is designed to improve the efficiency and power density of next-generation AI server power supplies.

As AI power architectures transition toward 800 VDC power distribution, the EPC2370 supports 6 V high-density, multi-kilowatt intermediate bus converters operating at 1 MHz. Developed on EPC’s seventh-generation GaN platform, the device features a 22 V transient voltage rating, a 101 A continuous current rating, and a 0.28 mΩ typical Rdson.

The chip is optimized for center-tapped synchronous rectification in 48 V-to-6 V and 800 V-to-6 V power converters. These specifications aim to enable peak efficiencies of 98% in high-density power modules. Beyond AI servers, the technology is intended for use in high-performance computing and telecommunications infrastructure.