Samsung, TSMC and Huawei Accelerate 1.4nm Chip Production Plans
Samsung Electronics announced it will start construction of a second semiconductor fab in Taylor, Texas, by the end of 2026, with mass production targeted for 2030. The company said the new plant will complement its first Taylor fab, which is on schedule to begin operations in 2026 and later expand to 2 nm capacity as demand for 1.4 nm nodes rises.
Taiwan Semiconductor Manufacturing Co. (TSMC) said its 1.4 nm facility in Taichung is being fast‑tracked, with the first building expected to be completed by April 2027, trial production slated for early Q3 2027 and volume output aimed for mid‑2028. TSMC is investing about $49 billion in four such fabs and expects wafer prices near $45,000. The company is also deploying artificial‑intelligence systems to monitor construction risks, thermal dynamics and staff safety during the build.
Huawei Technologies outlined a roadmap to reach a 1.4 nm‑equivalent process by 2031 without using EUV lithography from ASML. The plan relies on deep‑ultraviolet immersion tools, multi‑patterning techniques such as self‑aligned quadruple patterning, and advanced packaging to achieve the node despite the lack of EUV equipment.
Entities: Huawei Technologies · Huawei Technologies Co., Ltd. · Samsung Electronics · Taichung, Taiwan · Taiwan Semiconductor Manufacturing Co. · Taiwan Semiconductor Manufacturing Company · Taylor, Texas
Claims
What the coverage asserts, and how well corroborated each claim is across sources.
- [○ 1 SOURCE] Samsung's first Taylor fab is scheduled to start operation in 2026 and will later expand to 2 nm capacity. (Samsung announcement)
- [○ 1 SOURCE] TSMC is investing about $49 billion in four 1.4 nm fabs, with projected wafer prices around $45,000 each. (TSMC financial disclosure)
- [○ 1 SOURCE] TSMC is using artificial‑intelligence systems to monitor construction risks, thermal management and staff safety at its 1.4 nm fab sites. (TSMC AI implementation report)
- [○ 1 SOURCE] TSMC's 1.4 nm fab in Taichung, Taiwan, expects its first building to be completed by April 2027, with trial production in early Q3 2027 and volume production by mid‑2028. (TSMC progress report)
- [○ 1 SOURCE] Samsung will begin construction of a second semiconductor fab in Taylor, Texas by the end of 2026, targeting mass production in 2030. (Samsung announcement)
- [○ 1 SOURCE] Samsung is evaluating additional fab capacity for 1.4 nm production based on rising customer demand. (Samsung statement)
- [○ 1 SOURCE] Huawei's plan relies on deep‑ultraviolet immersion lithography and multi‑patterning techniques such as self‑aligned quadruple patterning. (Huawei technical details)
- [○ 1 SOURCE] Huawei aims to achieve a 1.4 nm‑equivalent semiconductor process by 2031 without using EUV lithography from ASML. (Huawei roadmap announcement)