SK Hynix capacity shortfall signals DRAM supply crunch amid industry expansion

Bank of America reports that SK Hynix will add only about one‑sixth of the memory capacity it had planned for by 2028, putting South Korea’s goal of doubling DRAM output by 2030 in doubt. The delay is traced to the long construction timeline of new fabs in Gwangju and Jeolla, which could take up to a decade to reach full operation. This shortfall weakens the companies’ position in the ongoing U.S. price‑fixing lawsuit that also involves Samsung and Micron. Meanwhile, Samsung Electronics has announced a multi‑hundred‑trillion‑won DRAM fab in Gyeonggi’s Gicheon park, targeting a monthly output of 100,000 wafers with construction expected to begin in the third quarter of 2026. Industry analysts note that the three DRAM giants are increasingly using strategic customer agreements (SCA), investing in AI‑chip startups and listing ADRs to stabilize earnings and mitigate cyclical risk. At the same time, the exit of legacy NAND giants such as Micron, Kioxia and Samsung from niche markets has driven SLC and MLC NAND prices sharply higher, with Taiwanese and Chinese manufacturers stepping in to fill the gap. These developments point to a tighter DRAM market through 2028, heightened price pressure and ongoing legal scrutiny.