imec demonstrates High NA EUV lithography breakthroughs

imec has demonstrated the feasibility of patterning tight-pitch random logic structures using a chemically amplified resist (CAR)-based single-print High NA EUV lithography step. The achievement includes lines and spaces down to a 22nm pitch and vias at a 28nm center-to-center distance.

This development indicates that established CAR resist technology can be utilized for single patterning in several layers of A14 and A10 logic technology nodes. The results were achieved through collaboration with ASML and various material suppliers to co-optimize the patterning ecosystem, including resist materials and etch techniques.

High NA EUV lithography is considered a critical enabling technology for the transition into the ångström era, addressing the increasing compute density demands of future AI and high-performance computing systems. The technology is also central to the imec-hosted European NanoIC pilot line, which aims to develop systems-on-chip beyond the 2nm threshold.