Infineon expands AI power solutions and climbs GaN market share

Infineon Technologies is expanding its footprint in the semiconductor market, driven by the growing demand for AI infrastructure. The company has introduced a new dual-phase smart power stage family, including the TDA235E5 and TDA235E0, designed for next-generation AI accelerators and vertical power delivery modules. These devices utilize OptiMOS 6 MOSFETs to achieve a power density exceeding 2 A/mm², supporting up to 300 A peak current.

According to a report by Yole Group, Infineon has significantly increased its market share in the Gallium Nitride (GaN) power device sector. Moving from fifth place in 2024 to second place in 2025, Infineon captured a 16% market share. This growth occurred as the total GaN power device market expanded by approximately 63% year-over-year to reach $588 million. While China-based Innoscience maintains the top position with a 31% share, Infineon's rapid ascent highlights the impact of AI-driven demand on power electronics.