Infineon to build world first 300mm GaN mass production line in Austria

The European Commission has approved 319 million euros in state subsidies for Infineon to construct the world’s first large-scale 300mm Gallium Nitride (GaN) power semiconductor production line. Located at the company’s Felberfeld plant in Austria, the project represents a total investment of approximately 1.1 billion euros.

The transition from 200mm to 300mm wafers is expected to increase chip output per wafer by approximately 2.3 times, significantly reducing unit costs. This technological shift is aimed at meeting the rising power demands of AI data centers. Infineon is currently developing GaN power conversion solutions for NVIDIA’s 800V AI data center architecture to improve power efficiency as rack power consumption moves toward the megawatt level.

While the GaN market for consumer fast-charging has seen declining margins due to intense price competition, the industry is shifting focus toward high-growth sectors. These include automotive onboard chargers (OBC), 48V auxiliary power supplies, and AI server power systems. Unlike Silicon Carbide (SiC), which dominates high-voltage applications, GaN is positioned for low-voltage, high-frequency, and high-efficiency applications.