Keysight and partners develop new sub-THz semiconductor testing method

Keysight Technologies, the University of Glasgow, the National Physical Laboratory (NPL), and MPI Corporation have developed a new method for the broadband characterization of next-generation sub-terahertz (sub-THz) semiconductor devices.

The collaboration demonstrated continuous on-wafer characterization of indium phosphide high-electron-mobility transistors (InP HEMTs) from near DC to 250 GHz in a single sweep. This approach simplifies measurements for advanced semiconductor research and design by eliminating the need for multiple measurement setups and calibrations typically required by conventional methods.

The solution integrates Keysight’s PNA-X Vector Network Analyzer and 250 GHz Frequency Extender, University of Glasgow’s InP HEMT devices, MPI Corporation’s on-wafer probing technology, and NPL’s metrology expertise. This allows for consistent broadband S-parameter measurements with a single probe touchdown.