Kioxia and SanDisk unveil high-density BiCS10 3D NAND memory

Kioxia and SanDisk have unveiled BiCS10, a new generation of 3D NAND flash memory. Utilizing a QLC architecture with 332 active layers, the chip achieves a record-breaking storage density of over 37 Gbit per square millimeter. This technology supports transfer speeds up to 4,800 MT/s, aiming to provide higher capacity and faster performance for data centers and high-performance NVMe SSDs.

In a separate development, Samsung has expanded its consumer NVMe lineup with the introduction of the Samsung 990 SSD. Available in 1 TB and 2 TB capacities, this PCIe 4.0 x4 model reaches sequential read speeds of up to 7,250 MB/s. Unlike the high-end 990 PRO, this model lacks integrated DRAM and features a three-year warranty and lower total bytes written (TBW) endurance compared to the PRO and EVO Plus models.