Kioxia launches mass production of 332‑layer 10th‑gen NAND flash for AI data centers

Japanese memory maker Kioxia began shipping samples of its new 1‑terabit TLC chip built on a 332‑layer 10th‑generation BiCS FLASH NAND architecture. The chips deliver a 4.8 Gb/s interface—about 33 % faster than the previous generation—while increasing bit density by roughly 59 % and cutting write power by 18 % and read power by 30 %. Production will occur at the Kitakami Fab2 plant in Iwate Prefecture, where a ceremony marked the start of serial manufacturing.

The launch follows a dramatic market rebound: Kioxia’s shares have risen more than sevenfold this year to a market value exceeding $250 billion, surpassing Toyota. The company, originally Toshiba Memory, plans a possible stock split and aims to list American depositary shares on a U.S. exchange in the fiscal year beginning April 2027. Analysts say Kioxia’s wafer‑bonding technology gives it a two‑ to four‑year lead over rivals as AI‑driven demand for high‑capacity NAND storage surges worldwide.