Korea Electrotechnology Research Institute corrects SiC semiconductor defect standard

A research team led by the Korea Electrotechnology Research Institute (KERI) has identified a long-standing error in the international standards used to detect defects in Silicon Carbide (SiC) power semiconductors. For approximately 15 years, the industry has used a light wavelength of 424nm to identify (4,1) Frank-type stacking faults, but the team discovered the actual emission wavelength is 459nm.

SiC semiconductors are critical components for electric vehicles and renewable energy systems due to their ability to operate under high voltage and temperature. During manufacturing, stacking faults can occur, compromising performance and reliability. To detect these, manufacturers use photoluminescence (PL) inspection, which treats specific light wavelengths as a “fingerprint” for defects.

To verify the correction, the researchers analyzed over 100,000 defect data points from 207 commercial wafers. They used atomic-resolution scanning transmission electron microscopy to observe actual atomic arrangements and cross-verified the findings with density functional theory (DFT) calculations. This discovery provides the scientific basis for revising International Electrotechnical Commission (IEC) standards, which is expected to improve manufacturing yields and quality control in the power semiconductor industry.