Lobachevsky University scientists patent semiconductor polishing solution

Scientists at Lobachevsky University in Nizhny Novgorod have developed a polishing solution for semiconductor wafers using pure silicon dioxide (SiO2). The researchers from the Laboratory of Engineering Chemical Research at the Institute of Chemistry received a patent in October 2026 for their method of purifying amorphous silicon dioxide.

The new solution allows for precise control over particle size and shape while minimizing impurities, which is critical for the reliability and performance of microchips. Production lines and processes for the material have already been established, and the mixture has been sent to an industrial partner for testing.

Developed under the Priority 2030 program, this domestic production aims to reduce reliance on foreign imports of high-purity abrasives, which have previously caused supply shortages for the Russian microelectronics industry. Future steps include scaling production and confirming manufacturer stability.