New doping method boosts organic semiconductor conductivity

Researchers from Concordia University, the Institut national de la recherche scientifique, and York University have developed a new doping method that could increase the electrical charges in organic semiconductors by up to 100 times. This breakthrough, published in the journal Nature Materials, addresses a major limitation in the conductivity of carbon-based materials.

Traditional doping involves adding a chemical dopant to a semiconductor to transfer electrical charges. However, conventional methods eventually reach a limit where the reaction products interfere with further electron transfers, capping conductivity. The new approach, termed “degradation-assisted doping” (DAD), utilizes a dopant that breaks down after accepting an electron. By decomposing, the dopant removes its reaction products from the process, allowing fresh molecules to continue transferring electrons without interference.

The team demonstrated the technique using the organic semiconductor P3HT and the chemical dopant tris(pentafluorophenyl)borane (BCF). This advancement could significantly enhance the performance of flexible electronics, wearable sensors, bendable displays, and lightweight solar cells.