NYCU and TSMC researchers achieve breakthrough in atomically thin transistors

Researchers from National Yang Ming Chiao Tung University (NYCU) and TSMC Corporate Research have developed a method to overcome a major engineering barrier in the development of atomically thin transistors. The breakthrough, published in Nature Electronics, focuses on engineering the atomic interface between a semiconductor and its insulating layer, known as the gate dielectric.

For years, engineers have faced a tradeoff when using two-dimensional semiconductors, such as molybdenum disulfide (MoS2), to replace silicon. While these materials can be just one atom thick, depositing an extremely thin dielectric layer to control electron movement often disrupts the delicate material interface, scattering electrons and reducing performance gains.

By redesigning the sub-nanometer boundary where the semiconductor meets the insulator, the team successfully demonstrated a monolayer MoS2 transistor with an equivalent oxide thickness of approximately one nanometer. This approach allows for stronger electrical control without sacrificing the mobility of charge carriers, potentially enabling smaller, faster, and more energy-efficient chips than current silicon-based technology.