Power Integrations unveils 2200V GaN technology for AI data centres

Power Integrations announced that its PowiGaN gallium‑nitride (GaN) devices are now rated up to 2200 V, a voltage level that surpasses all other commercially available GaN products. The company says the breakthrough enables higher power density, greater efficiency and simpler system architectures for next‑generation AI data centres, electric‑vehicle (EV) battery and auxiliary power systems, photovoltaic installations and high‑voltage direct‑current (HVDC) infrastructure.

Jennifer Lloyd, President and CEO of Power Integrations, stated that the 2200 V technology provides “substantial voltage margin for emerging high‑voltage power systems while enabling the high switching frequencies required to maximise power density.” The new capability extends GaN into voltage ranges traditionally served by silicon‑carbide (SiC) devices, offering a high‑frequency alternative for solar, HVDC and advanced industrial power conversion. Existing PowiGaN ICs rated at 1700 V and 1250 V are already being integrated into single‑stage data‑centre auxiliary power applications.