Renesas launches 650V GaN power device for AI data centers

Renesas Electronics has begun providing samples of its new 650V Gallium Nitride (GaN) power device, specifically designed for megawatt-scale AI data centers. The component, model TP65H020G4PLSGBD, utilizes a dual-side cooling PQFN package measuring 8x8mm. This design reduces the implementation area by 57% compared to previous TOLT packages and decreases top-side thermal impedance by 10%.

Built on the company’s Gen IV Plus architecture, the device supports operating voltages up to 700V and features a low on-resistance of 20mΩ. It is intended to support 800V high-voltage direct current (HVDC) architectures, which are being promoted by industry leaders like NVIDIA to reduce current and loss in power distribution. The device is targeted at intermediate bus converter stages, battery backup (BBU), and capacitor bank (CBU) stages within power racks.

Mass production is scheduled to begin in mid-2027. Renesas aims to provide a complete semiconductor solution for 800V power supplies, including controllers, gate drivers, and microcontrollers, to ensure supply chain flexibility for AI infrastructure providers.