Renesas Electronics launches new 100V GaN power transistors

Renesas Electronics has expanded its semiconductor portfolio by launching its first family of 100V enhancement-mode (E-mode) Gallium Nitride (GaN) discrete power transistors. The new product line includes four specific models: RTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL-DSC, and RTP100E1P2G1FL-DSC.

These low-voltage GaN FETs are designed for high-efficiency, high-power-density applications such as AI data centers, humanoid robotics, factory automation, industrial motor drives, power tools, and solar microinverters. The company reports that the devices can reduce switching losses by 40% to 70% and potentially double system-level power density compared to silicon-based implementations.

The technology targets the industry shift toward 800V DC power distribution and 48V bus architectures in AI infrastructure, which requires higher switching frequencies—potentially into the megahertz range—to reduce the size of passive components. To facilitate easier adoption, the transistors feature silicon-compatible footprints, allowing designers to migrate from conventional MOSFET designs with minimal changes to existing PCB layouts.