Renesas expands GaN semiconductor lineup for AI data centers and robotics

Renesas Electronics has expanded its gallium nitride (GaN) semiconductor portfolio with the introduction of new power devices targeting AI data centers, robotics, and industrial automation.

For high-voltage applications, the company has begun sampling a 650V GaN device designed for 800V high-voltage direct current (HVDC) power architectures in AI data centers. This device features a dual-side cooled package that reduces implementation area by 57% compared to traditional topside-cooled models, addressing the high power density requirements of megawatt-scale AI racks. Mass production is expected to begin in mid-2027.

Additionally, Renesas announced its first low-voltage 100V enhancement-mode (E-mode) GaN discrete power transistor series. These products are designed to improve efficiency in AI data centers and humanoid robots, offering significant reductions in switching losses compared to silicon-based designs. The low-voltage series maintains compatibility with standard MOSFET package sizes to facilitate easier integration into existing designs. This expansion follows Renesas's acquisition of Transphorm, allowing the company to offer a broader range of GaN solutions across various voltage levels.