Researchers develop new method to shape Silicon Carbide crystals

Researchers from Yanshan University and Sun Yat-Sen University have developed a new method to shape Silicon Carbide (SiC) semiconductor crystals more efficiently. SiC is highly valued for its ability to handle high voltages, but traditional shaping methods often cause microscopic cracks that lead to microchip failure.

In a study published in the International Journal of Extreme Manufacturing, the team utilized the friction heat generated during high-speed cutting to trigger a beneficial chemical reaction. By using a non-toxic azo compound called ACVA dissolved in a liquid polymer coolant, the researchers created a process where intense micro-contact friction causes the additive to split into free radicals.

This reaction creates a 10nm-thick layer of pliable amorphous silicon oxycarbide on the crystal surface. This temporary skin allows diamond tools to carve the brittle crystals smoothly without the deep sub-surface fractures typically caused by mechanical grinding or the warping risks associated with high-power lasers.