Samsung and Broadcom sign $200 bn AI semiconductor partnership through 2030

Samsung Electronics and Broadcom have signed a memorandum of understanding at the AI Summit in San Francisco that sets out cooperation on AI‑focused semiconductor technologies. The agreement, estimated to be worth more than $200 billion over the next five years to 2030, covers high‑bandwidth memory (HBM) for Broadcom’s AI accelerators, Samsung’s 2‑nanometre and smaller foundry processes, and advanced 2.3D/2.5D chip‑packaging.

Samsung will supply memory, logic‑chip manufacturing and packaging, while Broadcom will provide custom ASIC designs for AI and networking applications. Samsung’s Device Solutions vice‑chairman Young Hyun Jun said AI “is driving unprecedented demand for tightly integrated semiconductor technologies,” and Broadcom’s Charlie Kawwas added that the collaboration aims to “deliver technologies that power the next generation of AI infrastructure.”