Samsung develops cooling solutions for next-gen HBM4E AI memory

Samsung Electronics is developing advanced cooling technologies for its next-generation high-bandwidth memory (HBM4E) to address heat management challenges in AI packaging. As AI systems increasingly utilize larger interposers to connect multiple compute chiplets and memory stacks, the surface area for heat dissipation is expected to expand significantly.

To manage these thermal demands, Samsung is evaluating several methods, including hybrid copper bonding. This technique connects copper surfaces directly rather than using microbumps, resulting in a thinner stack and improved heat dissipation. Additionally, the company is validating a thermal-path block for HBM5, which creates a dedicated route for heat to bypass the high-speed data transmission areas of the die. Samsung aims to begin mass-producing HBM4E in 2027.