SMIC's N+3 Process Gives Huawei Kirin 9030 Higher Chip Density Than Intel 18A

Analysis of Huawei's Kirin 9030, used in the Mate 80 flagship, shows it was manufactured with SMIC's 7 nm N+3 node. The chip achieves a metal pitch of 32.5 nm, about 10 % tighter than Intel’s 18A node (36 nm) and narrower than TSMC’s N6 (40 nm). SMIC attained this density without extreme‑UV lithography, relying on deep‑UV tools, multi‑patterning and design‑technology co‑optimization.

Despite the denser layout, the Kirin 9030 trails in performance and power efficiency. Apple’s efficiency core delivers roughly 20 % more integer performance while consuming 1 W, whereas the Kirin’s prime core needs about 4.5 W. Its architecture corresponds to the 2021 Cortex‑X2 design, leaving it behind the latest cores from Intel, TSMC and Samsung. Analysts expect the gap to widen as 2 nm chips arrive, keeping SMIC’s lead in density limited to a niche advantage.

The findings highlight that China’s largest foundry can improve transistor density without EUV equipment, but the trade‑offs in speed and energy use mean the overall competitiveness of its SoCs remains behind leading global players.