Silicon carbide transistors developed for high-temperature use

Researchers at Kyoto University, in collaboration with semiconductor manufacturer Phenitec, have successfully fabricated silicon carbide (SiC) transistors across a six-inch wafer. This development marks a significant step in transitioning SiC technology from laboratory settings to large-scale production. The transistors are capable of operating at temperatures as high as 600°C, far exceeding the limits of traditional silicon-based electronics.

Silicon carbide is increasingly critical for both extreme-environment applications and renewable energy infrastructure. In the energy sector, SiC-based power semiconductors can endure much higher temperatures and voltages than silicon, allowing for smaller, more efficient inverters in solar and wind power systems. This capability helps reduce heat loss and material costs in utility-scale plants.

The ability to produce consistent transistors on larger wafers is essential for creating reliable circuits. The Kyoto University team reported that the manufacturing process maintained high consistency in threshold voltage across the wafer, which is vital for the stability of complex electronic circuits used in jet engines, deep-sea sensors, or high-voltage renewable energy hardware.