SK hynix breaks ground on $4 billion AI memory facility in Indiana

SK hynix has officially broken ground on a $4 billion advanced packaging and research and development facility at Purdue Research Park in West Lafayette, Indiana. This project marks the company’s first U.S. production hub for high-bandwidth memory (HBM), a critical component for artificial intelligence systems.

Under the planned production model, DRAM wafers will be manufactured at existing SK hynix facilities in South Korea and then shipped to the Indiana site. The West Lafayette facility will focus on the stacking, packaging, and testing of these wafers to create ‘Made in USA’ HBM products. Mass production at the new site is expected to begin in the second half of 2029.

The facility is projected to support approximately 1,000 employees. SK hynix selected Indiana due to Purdue University’s semiconductor research capabilities and workforce development programs. The groundbreaking ceremony included various state and federal officials, including Indiana Governor Mike Braun and U.S. Senator Todd Young.