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[TECHNOLOGY] · United States, South Korea, Japan, Taiwan, Germany · 42 sources

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AI Memory Innovations Unveiled at FMS 2026 Conference

At the Future of Memory and Storage (FMS) 2026 conference in Santa Clara, California, leading semiconductor companies announced a range of new memory technologies aimed at AI workloads.

Samsung Electronics showcased its V10 BV‑NAND prototype with more than 400 stacked layers, delivering about a 58 % increase in storage density over the previous V9 generation. The company also presented concept models of its zHBM and zNAND‑O architectures, claiming zHBM can achieve up to eight times the performance of HBM5, three times the energy efficiency, and more than a 50 % reduction in thermal resistance, while wafer‑bonding could enable over ten‑fold memory density versus conventional HBM5.

SK Hynix and SanDisk jointly released the first open specification for High‑Bandwidth Flash (HBF), supporting up to 512 GB per stack and bandwidth up to 3 TB/s, using 8‑ or 16‑layer NAND stacks to bridge the gap between high‑bandwidth memory and SSDs.

KIOXIA introduced the GP1 Series PCIe 6.0 NVMe SSDs, capable of up to 10 million random‑read IOPS, and announced the XL1 memory‑expansion module that pairs its XL‑FLASH with a CXL interface to supplement DRAM in AI systems.

Marvell Technology expanded its AI memory‑infrastructure portfolio with the Bravera SC6 PCIe 6.0 SSD controller (twice the performance of the prior generation), the Structera X CXL memory‑expansion platform, and a Photonic Fabric architecture that can share up to 32 TB of warm KV cache across distances of up to 50 m.

Entities

BV‑NAND (V10 Bonding V‑NAND) · Bank of America · Future of Memory and Storage (FMS) 2026 · Future of Memory and Storage (FMS) conference · Future of Memory and Storage conference · Kioxia · Marvell Technology · Micron Technology, Inc. · Rosenblatt Securities · SK Hynix · SK Hynix Co., Ltd. · Samsung Electronics

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澜起科技率先试产CXL® 3. 2内存扩展控制器_天极网 [news.yesky.com]
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