Samsung unveils next‑gen AI memory chips as SK Hynix launches high‑bandwidth flash
Samsung Electronics introduced its V10 Bonding V‑NAND (BV‑NAND) prototype at the Future of Memory and Storage (FMS) conference in Santa Clara, California. The chip features more than 400 layers and a new wafer‑bonding architecture that raises memory density by about 58% over the previous V9 NAND. Samsung also displayed concept models of its first zHBM and zNAND‑O architectures, claiming zHBM can deliver up to eight times the performance of HBM5, three times the power‑efficiency, and cut thermal resistance by more than half, while wafer‑bonding could enable more than ten‑fold density versus conventional HBM5.
At the same event, SK Hynix and SanDisk announced the open High‑Bandwidth Flash (HBF) specification, which stacks 8‑ or 16‑layer NAND dies to provide up to 512 GB per stack and bandwidth of up to 3 TB/s. HBF is positioned between high‑bandwidth memory (HBM) and SSDs to relieve AI inference bottlenecks. SK Hynix, which holds roughly 58% of the HBM market, has attracted bullish coverage and stock recommendations, with analysts noting that long‑term AI memory agreements could represent 60‑70% of Samsung’s memory sales. The developments underscore strong, growing demand for high‑capacity, energy‑efficient memory in AI data‑center infrastructure.
Entities: Bank of America · Future of Memory and Storage (FMS) conference · Future of Memory and Storage conference · Micron Technology, Inc. · Rosenblatt Securities · SK Hynix · SK Hynix Co., Ltd. · Samsung Electronics · Sandisk · V10 Bonding V‑NAND (BV‑NAND) · zHBM
Claims
What the coverage asserts, and how well corroborated each claim is across sources.
- [○ 1 SOURCE] SK Hynix controls roughly 58% of the high‑bandwidth memory market. (ids: bc5f9640-a100-4d10-9486-6062180485a7)
- [● 2 SOURCES] Samsung's zHBM architecture can deliver up to eight times the performance of HBM5 and three times the power efficiency, while reducing thermal resistance by more than half. (ids: 91427f1c-1d59-45d2-b449-9bf108b8f560, 39693e57-945e-48c0-9677-752c68d47b3e)
- [● 3 SOURCES] BV‑NAND increases memory density by about 58% compared with the previous V9 NAND. (ids: 39693e57-945e-48c0-9677-752c68d47b3e, d5bf1223-0fc4-4d39-a1bf-8f43c0a38b7b, c2af1bc4-124d-4de4-b334-979dfdd0cbf0)
- [● 2 SOURCES] Analysts project that long‑term AI memory agreements could account for 60‑70% of Samsung's memory sales. (ids: 39693e57-945e-48c0-9677-752c68d47b3e, d5bf1223-0fc4-4d39-a1bf-8f43c0a38b7b)
- [● 2 SOURCES] SK Hynix and SanDisk released the first open specification for High‑Bandwidth Flash (HBF) that supports up to 512 GB per stack and bandwidth up to 3 TB/s. (ids: fd1dd3bc-593f-4929-99d7-d1683afbc397, 12854344-f60e-4522-984b-7f8d26e53340)
- [● 2 SOURCES] HBF uses stacked 8‑ or 16‑layer NAND die to bridge between HBM and SSD, aiming to alleviate AI inference bottlenecks. (ids: fd1dd3bc-593f-4929-99d7-d1683afbc397, 12854344-f60e-4522-984b-7f8d26e53340)
- [● 2 SOURCES] Samsung claims its wafer‑bonding technology could enable more than ten‑fold memory density compared with conventional HBM5. (ids: 39693e57-945e-48c0-9677-752c68d47b3e, d5bf1223-0fc4-4d39-a1bf-8f43c0a38b7b)
- [● 4 SOURCES] Samsung Electronics introduced a V10 Bonding V‑NAND (BV‑NAND) prototype with more than 400 layers at the FMS 2026 conference. (ids: 39693e57-945e-48c0-9677-752c68d47b3e, d5bf1223-0fc4-4d39-a1bf-8f43c0a38b7b, c2af1bc4-124d-4de4-b334-979dfdd0cbf0, f)