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2 clusters · 4 sources · 18 days · First seen · Last updated

Advancements in 2D semiconductor material integration

Overview

Research in semiconductor technology has focused on improving the performance and integration of two-dimensional (2D) materials.

Initially, researchers at UNIST developed a manufacturing process to protect molybdenum disulfide (MoS2) from photoresist residue and plasma contamination during lithography. By using a 5-nanometer sacrificial gold film as a barrier, the team achieved a tenfold increase in on-current and significantly reduced contact resistance in transistors.

Subsequent developments have addressed the integration of 2D metal oxides with silicon technology. Using a van der Waals epitaxy approach, scientists successfully grew large-scale, single-crystalline films of transition metal monoxides, such as cobalt, iron, nickel, and manganese oxides, which are compatible with conventional chips. Additionally, new CMOS-compatible nanomechanical resonators using hafnium–zirconium oxide and silicon dioxide have been introduced to provide high-frequency stability and energy efficiency as an alternative to quartz resonators.

Entities

Massachusetts Institute of Technology · California Institute of Technology · Wenzhou University · Myung-Soo Kim · UNIST

Timeline

  1. 3 days ago

    [TECHNOLOGY] 2 sources
    Researchers advance silicon integration of 2D metal oxides and CMOS resonators

    Researchers have achieved breakthroughs in semiconductor technology, including growing single-crystalline 2D metal oxide films on silicon and developing temperature-stable CMOS-compatible resonators.

  2. 20 days ago

    [TECHNOLOGY] 2 sources
    UNIST researchers develop process to boost 2D semiconductor performance

    UNIST researchers developed a process using a 5nm sacrificial metal film to prevent residue contamination in 2D semiconductors, increasing transistor current performance by tenfold.

Sources

azonano.com · biz.heraldcorp.com · spintronics-info.com · zdnet.co.kr