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Gallium Nitride semiconductor technology development

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2026-10-23 08:06 UTC → 2026-10-24 08:46 UTC · added ~~removed~~

The semiconductor industry is expanding the development of Gallium Nitride (GaN) technology to meet high-efficiency power requirements in AI data centers, automotive, and aerospace sectors. Industry players are establishing new manufacturing and supply chain capabilities. Polar Semiconductor and Imec have partnered to provide 8-inch production of e-mode GaN devices via a license transfer agreement, while Taiwan-based GaNrich is expanding its power component lineup using both GaN-on-Si and GaN-on-Sapphire platforms to target robotics, drones, and electric vehicles. In the United States, the federal government is supporting research through the CHIPS and Science Act. Vertical Semiconductor, an MIT spin-out, has signed a letter of intent to receive up to $73 million in federal incentives to accelerate the development of next-generation vertical GaN power transistors. This research aims to create high-density AI racks capable of reducing energy losses by 30 percent and shrinking physical footprints by 50 percent. Furthering these efforts, the US Department of Commerce has signed non-binding letters of intent to provide up to $389 million in research and development grants to four companies under the CHIPS and Science Act. This funding targets advancements in power semiconductors, critical materials, and technologies essential for fusion energy and AI data centers. As a condition of these awards, the US government will acquire minority, non-controlling, and non-voting equity stakes in each of the recipient companies.

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