Applied Materials partners with Intel and Besi for AI chip development

Applied Materials is expanding its collaborative ecosystem at its upcoming Equipment and Process Innovation and Commercialization (EPIC) Centre in Silicon Valley to accelerate next-generation semiconductor technologies.

Intel has entered into a multi-site process technology collaboration with Applied Materials. This partnership focuses on advanced Foveros 3D packaging, transistor engineering, and power delivery architecture to support the high-performance computing requirements of agentic AI models. The joint engineering efforts will span Intel’s R&D campus in Hillsboro, Oregon, and the EPIC Centre.

Additionally, Besi (BE Semiconductor Industries) has joined the EPIC Centre as an innovation partner. Applied Materials and Besi are expanding their existing cooperation to co-develop hybrid bonding technologies for 3D IC development and the integration of logic and memory. Their research will target four key areas: evolving die-to-wafer hybrid platforms, scaling thermal compression bonding (TCB), developing die-on-wafer and die-on-panel integration, and supporting photonics-based interconnect applications for AI systems.