Applied Materials semiconductor R&D collaboration

Applied Materials has initiated a collaborative ecosystem centered around its new Equipment and Process Innovation and Commercialization (EPIC) Centre in Silicon Valley to advance semiconductor technologies for AI applications.

Initial partnerships focused on specific technical developments, including a multi-site collaboration with Intel on 3D packaging and transistor engineering, as well as an expansion of cooperation with Besi to co-develop hybrid bonding technologies for 3D IC development.

Following these developments, Applied Materials officially opened the $5 billion EPIC Centre in Sunnyvale, California. The facility, which includes 16,200 square meters of cleanroom space, aims to accelerate the transition from research to mass production by hosting a broad group of founding partners, including Samsung Electronics, SK hynix, TSMC, Intel, Micron, and Broadcom. Industry executives noted the collaboration is intended to drive innovation in AI memory technologies such as HBM, DRAM, and NAND.

The 600,000-square-foot facility utilizes a collaborative model involving major industry players, including innovation partners Broadcom, Kioxia, and Advantest, alongside academic research partners such as UCLA and Stanford University. This ecosystem aims to reduce the typical 10-to-12-year development cycle for new chip technologies to as little as six years. Research at the center focuses on 3D integration, advanced packaging, and new materials to improve energy efficiency and computing performance for the AI era.

To further strengthen its strategic position in advanced packaging, Applied Materials announced plans to increase its stake in BE Semiconductor Industries (Besi) from 9% to approximately 20% via an accelerated share purchase agreement. This move aims to deepen cooperation on hybrid bonding and 3D integrated circuits, though the transaction remains subject to regulatory conditions under the US Hart-Scott-Rodino Act.