Samsung unveils SF2P 2nm GAA process to compete with TSMC

Samsung is advancing its 2nm Gate-All-Around (GAA) roadmap with the introduction of the SF2P process. This third-generation platform aims to overcome previous performance issues, specifically addressing PMOS degradation, to compete more effectively with TSMC’s N2 production.

Technical details presented at the 2026 VLSI Symposium indicate that SF2P utilizes a new cell structure featuring a “hypercell” and varying nanosheet thicknesses to optimize performance. These improvements, alongside enhanced source/drain strain and reduced contact resistance, reportedly offer a performance-to-power ratio up to 2.6 times better than the 4nm (SF4) process.

The company’s roadmap has seen shifts due to yield challenges with the initial SF2 process. While SF2P mass production is expected to begin within the year, development for the 1.4nm node (SF1.4) has been delayed, with mass production now projected for 2029.